MRF7S18125AHR3 MRF7S18125AHSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
44
60
Pin, INPUT POWER (dBm)
53
51
50
34 3735
36 38 39
Actual
Ideal
52
Figure 7. Pulsed CW Output Power versus
Input Power
P
out
, OUTPUT POWER (dBc)
P6dB = 52.74
dBm (187.8 W)
54
(144.6 W)
55
P1dB = 51.60
dBm
56
57
40 41 42 43
VDD
= 28 Vdc, I
DQ
= 1100
mA, Pulsed CW
12
μsec(on), 1% Duty Cycle, f = 1840
MHz
300
18
15
70
VDD
= 28 Vdc
IDQ
= 1100 mA
f = 1840
MHz
TC
= ?30
C
25C
?30C
10
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
Gps
17.5
17
100
40
25C
85C
58
59
P3dB = 52.25
dBm (167.9 W)
16.5
16
15.5
15
14.5
14
13.5
13
12.5
25
35
45
50
55
60
65
85C
Figure 9. EVM versus Frequency
f, FREQUENCY (MHz)
Pout= 78
W Avg.
15 W Avg.
EVM, ERROR VECTOR MAGNITUDE (% rms)
1880
0
5
1810
3
1
1850
1840
1830
1820
4
2
VDD
= 28
Vdc
IDQ
= 1100
mA
EDGE Modulation
1860 1870
43 W Avg.
?50
SR @ 400 kHz
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
?55
?60
?65
Pout
= 78 W Avg.
SR @ 600 kHz
43 W Avg.
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
?70
?75
?80
VDD
= 28 Vdc
IDQ
= 1100
mA
EDGE Modulation
1880
1810 18501820 1860 18701830
1840
15 W Avg.
78 W Avg.
15 W Avg.
43 W Avg.
TC
= ?30
C
25C
85C
?75
?35
0
Pout, OUTPUT POWER (WATTS)
?50
?55
?60
?70
20
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL REGROWTH @ 400 kHz (dBc)
40 20060 80 100
120 140 160 180
?65
VDD
= 28 Vdc
IDQ
= 1100 mA
f = 1840 MHz
EDGE Modulation
?45
?40
TC
= ?30
C
25C
85C
?85
?45
0
Pout, OUTPUT POWER (WATTS)
?65
?70
?75
?80
20
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL REGROWTH @ 600 kHz (dBc)
40 20060 80 100
120 140 160 180
VDD
= 28 Vdc, I
DQ
= 1100
mA
f = 1840
MHz, EDGE Modulation
?60
?55
?50
ηD
η
D
,
DRAIN EFFICIENCY (%)
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